abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rsm = 2800 v i f(av)m = 6830 a i f(rms) = 10730 a i fsm = 8710 3 a v f0 = 0.8 v r f = 0.05 m w rectifier diode 5sdd 60n2800 doc. no. 5sya1155-01 jan. 05 patented free-floating silicon technology very low on-state losses optimum power handling capability blocking maximum rated values 1) parameter symbol conditions value unit repetitive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t j = 160c 2000 v non - repetitive peak reverse voltage v rsm f = 5 hz, t p = 10ms, t j = 160c 2800 v characteristic values parameter symbol conditions min typ max unit max. (reverse) leakage current i rrm v rrm , tj = 160c 400 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 81 90 108 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 2.8 kg housing thickness h f m = 90 kn, t a = 25 c 34.3 34.9 mm surface creepage distance d s 56 mm air strike distance d a 22 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5sdd 60n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1155-01 jan. 05 page 2 of 6 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m 50 hz, half sine wave, t c = 90 c 6830 a max. rms on-state current i f(rms) 10730 a max. peak non-repetitive surge current i fsm 8710 3 a limiting load integral i 2 t t p = 10 ms, t j = 160c, v r = 0 v 38.510 6 a 2 s max. peak non-repetitive surge current i fsm 9510 3 a limiting load integral i 2 t t p = 8.3 ms, t j = 160c, v r = 0 v 3810 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 5000 a, t j = 160c 1.05 v threshold voltage v (t0) 0.8 v slope resistance r t t j = 160c i t = 2500...7500 a 0.05 m w switching characteristic values parameter symbol conditions min typ max unit recovery charge q rr di f /dt = -10 a/ s, v r = 200 v i frm = 4000 a, t j = 160c 6300 m as
5sdd 60n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1155-01 jan. 05 page 3 of 6 thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj 160 c storage temperature range t stg -40 175 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 81...108 kn 5.7 k/kw r th(j-c)a anode-side cooled f m = 81...108 kn 11.4 k/kw r th(j-c)c cathode-side cooled f m = 81...108 kn 11.4 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 81...108 kn 1 k/kw r th(c-h) single-side cooled f m = 81...108 kn 2 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 3.731 1.250 0.434 0.292 t i (s) 0.8113 0.1014 0.0089 0.0015 fig. 1 transient thermal impedance junction-to- case.
5sdd 60n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1155-01 jan. 05 page 4 of 6 5 s d d 6 0 n 2 8 0 0 5 s d d 6 0 n 2 8 0 0 fig. 2 on-state characteristics. fig. 3 on-state characteristics. p (w) f fig. 4 on-state power losses vs average on-state current. fig. 5 max. permissible case temperature vs average on-state current.
5sdd 60n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1155-01 jan. 05 page 5 of 6 10 0 1 0 1 1 0 2 t [ m s ] i fsm [ k a ] 50 60 70 80 90 100 110 120 130 140 150 i fsm i 2 t i 2 d t [ m a 2 s ] 3 0 3 2 3 4 3 6 3 8 4 0 4 2 4 4 4 6 4 8 5 0 t j = 1 6 0 c 5sdd 60n2800 0 10 20 30 40 50 60 70 80 90 i fsm ( k a ) 2 0 n p 1 1 2 3 4 5 6 7 8 0 5 s d d 6 0 n 2 8 0 0 t j = 1 6 0 c fig. 6 surge on-state current vs. pulse length. half- sine wave. fig. 7 surge on-state current vs. number of pulses. half-sine wave, 10 ms, 50hz. 10 4 300 0 4000 500 0 6 000 7 0 00 8000 2 0000 q rr ( a s ) 3 0 1 1 0 2 3 4 5 6 7 8 9 2 0 i = 4000 a t j = t jmax 5 s d d 6 0 n 2 8 0 0 2 00 0 3 000 0 frm - d i /d t ( a / s ) f 10 2 40 50 60 70 80 200 300 400 500 600 3 0 1 1 0 2 3 4 5 6 7 8 9 2 0 30 i = 4000 a t j = t jmax 700 -di /dt(a/s) i (a) rm f 5 s d d 6 0 n 2 8 0 0 frm fig. 8 recovery charge vs. decay rate of on-state current. fig. 9 peak reverse recovery current vs. decay rate of on-state current.
5sdd 60n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1155-01 jan. 05 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors h fig. 10 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. related application notes: doc. nr titel 5sya 2020 design of rc-snubbers for phase control applications 5sya 2029 designing large rectifiers with high power diodes 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors please refer to http://www.abb.com/semiconductors for actual versions.
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